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溅射功率对Ca2Si薄膜性质的影响 被引量:1

Effects of sputtering power on properties of Ca2Si films
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摘要 采用射频磁控溅射技术在Si(100)衬底上沉积了si-ca-si薄膜,并在高真空条件下对样品进行退火处理,直接生成立方相Ca2Si薄膜。研究了不同溅射功率对薄膜的晶体结构、表面(断面)形貌的影响,并对其光学性质进行了测试分析。结果表明:Ca2Si薄膜为立方结构且具有沿(111)向择优生长的特性,当溅射功率为120W时,Ca2Si薄膜变的均匀、致密,在400-800nm波长范围内,溅射功率对折射率n和吸收系数k的影响较小。 Si-Ca-Si films were deposied on Si(100)by radio frequency magnetron sputtering, which were annealed at 800℃ for 1.5 h. The crystal structure, surface roughness, cross roughness and optical properties at different sputtering power were studied. The results indicate that the Ca2Si films are cubic structure, the films are equality and compact when the sputtering power is 120 W. The result of the optical constants of the film shows that n (L) and k (L) go down slightly by sputtering power with the wavelength from 400nm to 800nm.
出处 《功能材料》 EI CAS CSCD 北大核心 2007年第A04期1519-1521,共3页 Journal of Functional Materials
基金 基金项目:国家自然科学基金资助项目(60566001)
关键词 射频磁控溅射 Ca2Si薄膜 溅射功率 radio frequency magnetron sputtering Ca2Si films sputtering power
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