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基于CMOS工艺的低噪声高稳定性LDO的设计 被引量:2

Design of Low Noise High Stability LDO Based on CMOS Process
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摘要 介绍了一种LDO线性稳压器电路,给出了基本结构及其工作原理。重点分析了产生噪声的原因以及用旁路滤噪电路实现低噪声、用内部动态补偿电路实现高稳定性的电路结构和性能特点,针对输出短路或者负载电流过大设计了过流保护电路。整个电路采用HYNIX 0.5μmCMOS工艺实现,基于HSPICE进行仿真验证,输出噪声为1μV(rms),典型环路增益为60 dB,相位裕度65°,证明了稳压器的低噪声和高稳定性。 LDO ( low dropout) linear regulator was introduced, the basic structure principal were presented. The sources of the noise were analyzed emphatically, the bypass and operational capacitor filter circuit and dynamic frequency compensation circuit were adopted in order to achieve low noise and high stability. Over current protecting circuit was added to deal with shorted output or too large load current. Based on HYNIX 0.5 μm CMOS process, HSPICE simulation results show that output noise is 1 μrms, loop gain is 60 dB and phase margin is 65°, it proves the low noise and high stability of LDO.
出处 《半导体技术》 CAS CSCD 北大核心 2007年第12期1056-1059,共4页 Semiconductor Technology
基金 国家教育部博士点基金资助项目(20010701003)
关键词 LDO线性稳压器 旁路滤噪 低噪声 动态补偿 LDO linear regulator bypass capacitor filter low noise dynamic compensation
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参考文献3

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二级参考文献1

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共引文献93

同被引文献12

  • 1张娜娜,梁齐.一种新型过流保护电路的设计研究[J].中国集成电路,2007,16(5):68-71. 被引量:11
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  • 9张强,陈贵灿,田泽,王进军,李攀.带有快速启动的高精密低噪声CMOS带隙基准[J].现代电子技术,2007,30(20):150-153. 被引量:2
  • 10汪西虎,吴龙胜,刘佑宝.极点跟随的LDO稳压器频率补偿方法[J].现代电子技术,2008,31(15):157-159. 被引量:1

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