摘要
设计并用分子束外延技术生长了InP基InGaAs/AlAs体系RTD材料,采用传统湿法腐蚀、光学接触式光刻、金属剥离、台面隔离和空气桥互连工艺,研制出了具有优良负阻特性和较高阻性截止频率的InP基RTD单管.器件正向PVCR为17.5,反向PVCR为28,峰值电流密度为56kA/cm2,采用RNC电路模型进行数据拟合后得到阻性截止频率为82.8GHz.实验为今后更高性能RTD单管的研制,以及RTD与其他高速高频三端器件单片集成电路的设计与研制奠定了基础.
InGaAs/A1As RTD material structure on lnP substrate is designed and grown by molecular beam epitaxy. A device with good negative differential resistance characteristics and a higher resistive cutoff frequency is fabricated using mesa isolation, metal lift-off,wet chemical etch, and air bridge technologies. The forward bias peak-to-valley current ratio （PVCR） and reverse bias PVCR are about 17.5 and 28, respectively. The peak current density is 56kA/cm^2 , and the data fitting resistive cutoff frequency using an RNC circuit model is 82.8GHz. The experiment lays a foundation for the design and fabrication of high-performance RTD and monolithic integration circuits of RTD and other high speed and high frequency three terminal devices.
基金
国防科技重点实验室基金(批准号:9140C060203060C0603)
中国博士后科学基金(批准号:20060400189)资助项目~~
关键词
谐振隧穿二极管
INP
负阻
阻性截止频率
resonant tunneling diode
InP
negative differential resistance
resistive cutoff frequency
