摘要
碳化硅由于它优异的热、机械及电阻率性能而被广泛用于加热元件。通过对SiC电热元件制备工艺的研究和制品性能的测试,找出最佳的素烧温度和最佳素烧填充料,并对比了单热源烧成和多热源烧成的温度场的特点,找出了烧成的最佳温度区域。测试实验产品的导电性能、抗压强度,使用X-射线粉末衍射仪对制品的物相进行分析,使用电子扫描显微镜对制品表面形貌、孔道结构与分布、晶体结构进行分析,确定影响碳化硅电热元件电性能的因素。
SiC is extensively used in heatig Element because of its excellent performance of heat, mechanics and electric conduction. Through studying on preparation technology and testing product＇ s properties, the optimal biscuit firing and sintering temperature are found, the characteristics of temperature field between single thermal source and double thermal sources are contrasted. And the optimal sintering field area is also found. The electric conduction and the compressive strength of the sample are tested. The product＇s components are analyzed through applying X-ray Diffraction, The product＇ s surface shape, pore structure and distribution, crystal structure, These are analyzed through applying electronic microscope. The factors influencing the performance of Silicon Carbide heating Element are confirmed.
出处
《工业加热》
CAS
2007年第6期60-64,共5页
Industrial Heating
基金
陕西省工业攻关项目(2004K07d16)
关键词
碳化硅电热元件
制备
结晶性能
电阻率
素烧
Silicon Carbide electro-heating Element
preparation
Crystal property
Electrical Resistivity
Biscuit firing
