摘要
A macro-circuit equivalent model for ferroelectric liquid crystal （FLC） is proposed. The model includes both effects of ferroelectric toque and dielectric torque and is utilized to simulate the switching response and memory behavior of a single FLC cell . Simulation results show that the delay time has a minimum while increasing the amplitude of drive voltage and the amplitude of bipolar pulses should be controlled within a certain range to realize the memory behavior. Also the switching angle is successfully enhanced to the reference value of 22.5° by adopting ＂AC stabihzation＂ addressing method.
基金
Supported by the National Natural Science Foundation of China （No. 10174057
90201011）, the Technology Import Item of Ministry of Education （No. 105148）, the Application Foundation of Sichuan Province （No. 03JY029-048-1 ） and the Science Study Foundation of Southwest Jiaotong University （No. 2001B11）.
