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导热涂层对LED散热性能的影响 被引量:19

Effect of Thermal Conductive Coating on Thermolysis Property of LED
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摘要 研究了导热涂层对不同发光颜色、不同封装数量的水下密闭环境下应用的发光二极管(LED)散热情况的影响,结果表明:红色LED的温度上升最慢,蓝色次之,绿色LED的温度上升最快;封装数量越多,LED的温升越快;在LED系统集成电路板上加入导热涂层能提高其散热效率,高导热率涂层的散热效果优于低导热率涂层。 The effect of thermal conductive coating on the thermolysis property of LED lamps with different color and packing number used in a close under-water environment was studied. Experiment result shows that under the same situation the temperature of red LED lamps increases the slowest, then blue lamps, and that of the green lamps increases the fastest; the more the packing number, the quicker of the temperatures of LED lamps increase; the thermal conductive coating used on LED integrated circuit board can increase the thermolysis efficiency of LED. The coating with higher thermal conductivity shows a better thermolysis property. The obtained data can offer a reference for thermal conductive coating thin films applied in LED packing.
出处 《半导体光电》 EI CAS CSCD 北大核心 2007年第6期793-796,共4页 Semiconductor Optoelectronics
基金 教育部新世纪优秀人才支持计划项目(NCET-05-0764) 重庆市自然科学重点基金项目(CSTC2005BA4016)
关键词 导热涂层 散热性能 LED 硅胶 硅脂 thermal conductive coating thermolysis property LED silica gel silicon grease
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  • 1李忠辉,丁晓民,杨志坚,于彤军,张国义.高亮度InGaN基白光LED特性研究[J].红外与毫米波学报,2002,21(5):390-392. 被引量:10
  • 2宋贤杰,屠其非,周伟,周太明.高亮度发光二极管及其在照明领域中的应用[J].半导体光电,2002,23(5):356-360. 被引量:52
  • 3严萍,李剑清.照明用LED光学系统的计算机辅助设计[J].半导体光电,2004,25(3):181-182. 被引量:25
  • 4张绍纲,TanLevin.航天照明[J].照明工程学报,2004,15(2):45-48. 被引量:3
  • 5Fumitomo H, Peter K. White light from InGaN/conjugated polymer hybrid light-emitting diodes [J].Appl. Phys. Lett., 1997,70(20):2664-2666.
  • 6Park J K, Lim M A, Kim C H, et al. White lightemitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties[J]. Appl. Phys. Lett. , 2003,82(5):683-685.
  • 7Nishizawa J,Itoh K,Okuno Y,et al. LPE AlGaAs and redLED (candela classs) [J]. J. Appl. Phys. , 1985,57:2210-2214.
  • 8Huang K H,Yu J G,Kuo C P,et al. Twofold efficiency improvement in high performance AlGalnP lightemitting diodes in the 555~620 nm spectral region using a thick GaP window layer[J]. Appl. Phys. Lett. ,1992,61(9) :1045-1047.
  • 9Sugawara H,Itaya K,Nozaki H,et al. High-brightness InGaAlP green light-emitting diodes[J]. Appl. Phys.Lett. ,1992,61(15):1775-1777.
  • 10Kish F A, Steranka F M, DeFevere D C, et al. Very high-efficiency semiconductor wafer-bonded transparent-substrate ( AlxGa1-x )0. 5 In0. 5 P/GaP lightemitting diodes[J]. Appl. Phys. Lett. , 1994,64(21):2839-2841.

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