摘要
多晶硅薄膜在微电子和能源科学领域有着广泛的应用。本文介绍了利用铝诱导晶化非晶硅制备多晶硅薄膜的方法,叙述了铝诱导晶化法制备多晶硅薄膜的一般过程,着重讨论了铝诱导晶化非晶硅的机理和在制备过程中各种参数对多晶硅薄膜质量的影响。
Polycrystalline silicon （poly-Si） thin films are wildly used in microelectronics and energy sources field. This article introduced the method of fabricating poly-Si thin films by aluminum-induced crystallization （AIC）of amorphous silicon, and described the general process of fabricating poly-Si thin films. The mechanism of AIC and the influence of various parameters on the quality of poly-Si thin films were mainly discussed.
出处
《现代显示》
2008年第1期47-51,共5页
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基金
教育部留学回国科研启动基金:新型光伏效应的探索性研究(669022)
关键词
铝诱导晶化
多晶硅薄膜
晶化机理
aluminum-induced crystallization
poly-Si thin films
crystallization mechanism
