摘要
介绍了蓝宝石衬底的化学机械抛光工艺,讨论分析了影响蓝宝石衬底化学机械抛光的因素,定量确定了最佳CMP工艺。提出先以重抛过程提高蓝宝石抛光速率,然后以轻抛过程降低最终表面粗糙度的工艺路线。在配制抛光液时加入FA/OⅠ型活性剂保护SiO2胶粒的双电子层结构。在轻抛过程之前抛光垫用原液浸泡20～30min,抛光磨料直径为20～40nm。实验最佳工艺条件下的抛光速率达231.6nm/min,粗糙度降至0.34nm。
Chemical mechanical polishing （CMP） technique of sapphire substrate was introduced. The factors of influencing polishing rate and RMS were discussed and CMP technique was quantified. The polishing rate of sapphire was enhanced by heavy pressure process and then the RMS of surface was reduced by light pressure process. FA/O I surfactant in the slurry was added to protect the double electronic shell of SiO2 sol. Polishing pad was dipped in SiO2 sol for 20-30 min before light pressure process, and the diameter of SiO2 sol was 20-40 nm. At the best experimental condition, polishing rate reached 231.6 nm/min and RMS reduced to 0.34 nm.
出处
《微纳电子技术》
CAS
2008年第1期51-54,共4页
Micronanoelectronic Technology
