摘要
利用分子束外延技术研制出了高质量InGsAs/GaAs应变量子阱材料及量子阱激光器.脊形波导窄条形量子阱激光器的阈值电流和微分量子效率分别为15mA和0.8 W/A,线性输出功率大于150mW,基横模输出功率可达100mW.InGaAs应变量子阱激光器和单模光纤进行了耦合,其组合件出纤光功率典型值为40mW,最大值可达60mW.显示出了高的基横模输出功率和高的耦合效率.其组合件在40～60mW下,中心发射波长在977nm.满足了对掺铒光纤高效率泵浦的波长要求,成功地研制出适于掺铒光纤放大器用的应变量子阱激光器.
Using solid state molecular beam epitaxy technology we have grown the high quality InGaAs/GaAs strained quantum well materials and fabricated quantum well lasers. The threshold current and differential quantum efficiency of the ridge wavegiude quantum well lasers with coated films are 15 mA and 0. 8 W/A, respectively. The linear output power is more than 150 mW, and 100 mW and larger fundamental mode output power is achieved. Through the coupling with an Er-doped fiber, the output power of 40-60 mW has been demonstrated, and the emitting wavelength is near 977 nm.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1997年第10期873-876,共4页
Chinese Journal of Lasers
关键词
应变层
量子阱
半导体激光器
strained layer, quantum well, semiconductor laser, coupling
