摘要
Ａｌ原子含量约为５０％的Ｔａ／Ａｌ合金薄膜具有优良的电阻性能。使用直流共溅射的方法制作这种薄膜，靶极采用了Ａｌ面积为４５％的Ｔａ／Ａｌ复合靶。研究了工艺参数如溅射气压、溅射电压以及热处理条件等因素对该薄膜的性能影响。结果表明，这种Ｔａ／Ａｌ合金薄膜能用于制作功率稳定的电阻器或电阻网络。
The Ta/Al alloy film containing Al 50% at.has an excellent resistive performance.The film is deposited by DC co sputtering from tantalum cathode,45% of which is covered with area of aluminum discs.The influence of technological parameters such as sputtering pressure,sputtering voltage and heat treatment conditions etc.on the properties of the film is explored.The results show that the Ta/Al alloy film can be used for stable power resistor or resistive network.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
1997年第5期492-495,共4页
Journal of University of Electronic Science and Technology of China
关键词
合金薄膜
电阻性能
共溅射
钽铝合金
Ta/Al alloy film
resistive performance
co sputtering
technological parameters
