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Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets 被引量:3

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets
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摘要 To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained. To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.
出处 《Rare Metals》 SCIE EI CAS CSCD 2008年第1期32-35,共4页 稀有金属(英文版)
关键词 ZNO transparent conductive thin film RF magnetron sputtering optical properties electrical properties ZnO transparent conductive thin film RF magnetron sputtering optical properties electrical properties
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