摘要
用热化学气相沉积法在阳极氧化4min的钛片上直接生长了有序碳纳米管束阵列。扫描电镜和透射电镜表征分析证明碳纳米管呈有序束状,管束由缠绕的碳纳米管组成。用半导体参数测试仪测得的电流-电压特性曲线接近线性,表明碳纳米管和钛片间近似欧姆接触。X射线衍射(XRD)表明TiC层的存在,进而通过对C-Ti二相图的分析确定TiC层是实现碳纳米管与钛基底近似欧姆接触的原因。用交流阻抗和循环伏安研究了碳纳米管阵列的电化学性质,证明其具有良好的电容特性。
Carbon nanotube bundle arrays were successfully grown on titanium plate, which was anodized for 4 minutes, by thermal chemical vapor deposition. The images of scanning electron microscopy and transmission electron microscopy revealed that the morphology of carbon nanotubes was aligned bundles and the bundle was composed of tangled carbon nanotubes. The current -voltage curve was measured by a micromanipulator manual probe station, the result indicated there was an ohmic contact between titani- um substrate and carbon nanotube. A TiC layer between titanium substrate and carbon nanotube is the reason of the ohmic contact, which could be ascertained by X -ray diffraction （XRD） and titanium - carbon binary phase diagram. The analysis of cyclic vohammetry and AC ance testified the excellent capacitive character of this material.
出处
《功能材料与器件学报》
CAS
CSCD
北大核心
2008年第1期55-58,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金重点基金(No.20337020)
国家自然基金对外交流与合作项目(No.20640160447)
关键词
碳纳米管阵列
导电基底
欧姆接触
电容特性
carbon nanotube array
conductive substrate
ohmic contact
capacitive character
