摘要
双束聚焦离子束(DB-FIB)已经成为半导体工业中,尤其是失效分析(FA)工作中非常重要的工具。当进行表面缺陷的分析时,为了保证缺陷的完整性,在离子束铣削之前往往会在缺陷上沉积一层Pt薄膜作保护层。DB-FIB将离子束和电子束集成在一套设备中,因而允许使用常规的离子束辅助沉积(IA-CVD)和电子束辅助沉积(EA-CVD)技术。讨论了一个铝焊垫(Pad)表面缺陷分析的案例。采用常规LA-CVD沉积Pt层的方法,造成缺陷损伤,棱心消失,界面模糊。而采用EA-CVD沉积Pt层的方法,造成的损伤极小,缺陷保留完整,最终分析得出该Pad表面缺陷是由于原电池反应所产生的表面缺陷。
The Dual - Beam Focused Ion Beam （ DB - FIB） has become a very important instrument in the semiconductor industry, especially in the Failure Analysis （FA） field. To analyze a surface defect, a Pt film will be deposited on the defect surface for protect before ion milling of FIB. Dual - beam instruments incorporate both an electron column and an ion column into a single instrument, and therefore allow the chemical vapor deposition （CVD） process to be either ion - or electron - beam assisted. In this paper, a case about pad surface defect is discussed. Damage is observed in the surface defect in which ion - beam assisted CVD processes are employed. But electron - beam assisted CVD processes protect the surface very well, and the mot cause of the surface defect turns out to be the pad surface Galvanic Cell effect.
出处
《电子科技》
2008年第3期26-29,共4页
Electronic Science and Technology
关键词
聚焦离子束
失效分析
电子束
原电池反应
focused ion beam
failure analysis
electron beam
galvanic cell effect
