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氧化物异质外延薄膜生长的计算机模拟

Simulation of the hetero-eptiaxial growth of oxide thin films
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摘要 利用Monte Carlo方法分别模拟了在Sr-TiO3基底上沉积MgO薄膜和在MgO基底上沉积SrTiO3薄膜。模拟中,选取与实验中薄膜生长相近的参数条件,引入了新的参数扩散势垒,得到了在晶格正失配(张应力)和负失配(压应力)下薄膜生长的形貌图以及薄膜粗糙度的变化曲线图,分析了张应力和压应力对薄膜生长形貌的影响。模拟结果与文献报道的外延薄膜生长模式的实验观察结果一致。 The hetero-epitaxial growth of the MgO films deposited on the SrTiO3 substrates and the SrTiO3 films deposited on the MgO substrates is simulated by Monte Carlo method. Choosing proper parameter and diffusion bounds, the 3D morphology and surface roughness of thin films were simulated. The relationship of 3D morphology and compressive stress, tensile stress are also investigated. The simulation results are quite agreement with the experimental results published in the literature.
出处 《功能材料》 EI CAS CSCD 北大核心 2008年第3期430-432,共3页 Journal of Functional Materials
基金 国家重点基础研究发展计划(973计划)资助项目(Z0601) 国家自然科学基金重点资助项目(50132020)
关键词 MONTE CARLO模拟 异质外延模拟 扩散势垒 薄膜生长 Monte Carlo simulation hetero-epitaxial simulation diffusion bounds thin film growth
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参考文献14

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二级参考文献10

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