摘要
本文对由AIAs，AIyGl-yAs、AIxGal-xAs和GaAs四种材料构成的超晶格价带的自旋劈裂进行了研究．通过改变材料组分和层厚，发现当超晶格单胞对其中心点是不对称结构时，对应的自旋向上和自徒向下的子带产生劈裂，而且劈裂主要发生在重空穴带和轻空穴带相互作用较强的地方．
We discuss the spin - splitting on the valence - band state of quart - constituent materialsuperlattices : AlAs, AlyGal-yAs, Alx Gal-xAs and GaAs. By varying the material compositions or thelayer thickness,we observed that the bands corresponding to the spin-up and spin-down split when thesuperlattice unit-cell is asymmetrical about the cell center. Moreover,the splitting mainly occurs at theregion where the heavy hole and light hole interact on each other strongly.
出处
《光子学报》
EI
CAS
CSCD
1997年第7期599-603,共5页
Acta Photonica Sinica
