摘要
通过溶胶-凝胶法制备了Tb3+、Ga3+共掺杂的Si O2发光材料,利用红外光谱、X射线衍射仪对其结构进行表征,通过三维、激发光谱和发射光谱对其发光性质进行分析.结果表明:经过700℃退火处理后的材料,其红外光谱只显示O-Si-O键的存在,表明水和有机物已完全除去;用544 nm作为监测波长测得的激发光谱符合三价稀土离子的激发规律;在230 nm光激发下得到4条Tb3+的特征发射谱带,分别是467 nm(5D3-7F6),492 nm(5D4-7F6),544 nm(5D4-7F5),583 nm(5D4-7F4),且来自5D3的跃迁在高温时由于交叉弛豫而猝灭;只掺杂Ga3+的材料在460 nm处发出强烈蓝光,Tb3+、Ga3+共掺杂Si O2材料在460 nm处蓝光急剧减弱,而对发光中心Tb3+544 nm处的5D4-7F5跃迁和492 nm处的5D4-7F6跃迁均有促进作用.此外,还分别研究了不同Ga3+或Tb3+的掺入量、退火温度对材料发光性质的影响.
Tb^3＋ and Ga^3＋ co-doped SiO2 materials were prepared by sol-gel method. Their IR and XRD were measured. The results indicate that the materials were in amorphous phase and the Si-O-Si bond was still observed in samples annealed at 700 ℃. The influence of Ga^3＋ on luminescence properties of terbivm glasses was investigated by excitation and emission spectra. The sample excited by 230 nm showed the characteristic emission peaks of terbium corresponding to ^8 D4 -^7 FJ （J = 4,5,6） and ^5 D3 -^7 F6 transitions. The emission from ^5 D3 quenched at high temperatures. Ga^3＋-doped SiO2 materials radiated blue light at 460 nm. ^5D 4 -^7 F6 and ^5 D4 -^7 F5 transitions of Tb^3＋ ,Ga^3＋ co-doped SiO2 materials were all activated, but blue light at 460 nm was quenched. Doping Ga^3＋ or Tb^3＋ to SiO2 materials with terbium had less influence on the emission position but greater effect on the emission intensity.
出处
《内蒙古师范大学学报（自然科学汉文版）》
CAS
2008年第2期224-229,共6页
Journal of Inner Mongolia Normal University(Natural Science Edition)
基金
国家自然科学基金资助项目(20161001)
内蒙古自然科学基金资助项目(200508010206)
内蒙古师范大学科研基金项目(YJS06008)
