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双色红外焦平面研究进展 被引量:19

Review of two-color infrared focal plane arrays
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摘要 介绍了叠层双色红外焦平面的发展背景和适用的材料体系,及其在国际上的发展现状,重点论述了叠层双色探测器结构类型及其探测特点,最后介绍了国内碲镉汞叠层双色焦平面的研究进展。报道了基于n-+p-P-P-N多层异质结Hg1-xCdxTe材料的叠层中波/短波(256×1)×2红外双色焦平面器件研制及性能。在77 K液氮温度下,红外焦平面探测器的两个波段的截止波长λc分别为2.8μm和3.9μm,中波/短波焦平面的平均单色探测率D*%p分别为1.8×1011 cmHz1/2/W和9.6×1010 cmHz1/2/W。 The development background and applied material structure of integrated two-color infrared focal plane are presented,including current international progress.The structure types and characteristics of integrated two-color infrared detector are discussed in detail.The domestic research progress of integrated two-color infrared focal plane is introduced finally.The multi-layer n^+-p-P-P-N heterojunction Hg1-xCdxTe film,device fabrication and performance of integrated SW/MW two-color(256×1)×2 infrared focal plane arrays was reported in this paper.At 77 K temperature,the cut-off wavelengths of the two bands were 2.8 μm and 3.9 μm respectively,the peak detectivities D^*λp were 1.8×10^11cmHz^1/2/W and 9.6×10^10 cmHz^1/2/W.
出处 《红外与激光工程》 EI CSCD 北大核心 2008年第1期14-17,29,共5页 Infrared and Laser Engineering
基金 双色红外探测器列阵读出电路研究资助项目(06ZR14097)
关键词 双色 红外焦平面 碲镉汞 Two-color IRFPA HgCdTe
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参考文献17

  • 1ROGALSKI A.Infrared detectors:status and trends[J].Progress in Quantum Electronics,2003,27(2-3):59-210.
  • 2GOLDBER A C,FISCHER T,DERZKO Z.Application of dualband infrared focal plane arrays to tactical and strategic military problems[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅫ,2003,4820:500-514.
  • 3REAGO D A,STUART H,JAMES C.Third generation imaging sensor system concepts[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅫ,1999,3701:108-117.
  • 4RADFORD W A,PATTEN E A,KING D F,et al.Third Generation FPA Development Status at Raytheon Vision Systems[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅫ,2005,5783:331-339.
  • 5TRIBOLET P,DESTEFANIS G.Third Generation and multicolcor IRFPA developments:a unique approach based on DEFIR[C]//Proceedings of SPIE,Infrared Technology and Applications ⅩⅩⅫ,2005,5783:350-365.
  • 6ANTONI R.Toward third generation HgCdTe infrared detectors[J].Journal of Alloys and Compounds,2004,371(1-2):53-57.
  • 7ANTONI R.Third -generation infrared photon detectors[J].Optical Engineering,2003,42(12):3498-3516.
  • 8RAJAVEL R D,JAMBA D M,WA O K,et al.High performanceHgCdTe two-color infrared detectors grown by molecular beam epitaxy[J].J Crystal Growth,1997,175/176:653-658.
  • 9RAJAVEL R D,JAMBA D M,JENSEN J E,et al.Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation[J].Journal of Crystal Growth,1998,184:1272-1278.
  • 10RAJAVEL R D,JAMBA D M,JENSEN J E,et al.Molecular beam epitaxial growth and performance of HgCdTd-based simultaneous-mode two-color detectors[J].J Electronic Materials,1998,27(6):747-751.

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