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YAG:Ce^(3+)荧光粉对白光LED衰减的影响 被引量:13

Effect of the YAG:Ce^(3+) phosphor on the light output degradation of white LED
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摘要 对封装的蓝光和白光LED进行了光衰对比试验,结果表明,白光LED初期衰减明显比蓝光LED快。因此,又对自制的YAG:Ce3+荧光粉进行了光照、温度测试,结果发现,荧光粉在光照作用下,荧光强度出现先降后升然后稳定的现象,跟白光LED的衰减相吻合,结合色坐标的偏移,蓝光LED本身的衰减仍是白光LED衰减的主要原因。 We traced three group of LEDs,the light output degradation and color shift properties as a function of time were measured. The curve indicate that white-LED's degradation is faster than that of blue-LED, especially during the beginning 250 hours. So two experiments were conducted on our YAG:Ce^3+ phosphor. A blue-LED lighting and a oven were used to test the YAG: Ce^3+ phosphor. After 246 hours, the fluorescence intensity of phosphor decreased 14. 2 %, then, it increased to 91.4% of initial value,which just explained the degradation of white-LED. According to the data,it can be seen that the temperature has no effect on the phosphor,and the blue-LED'degradation is the main reason for the degradation of white LED.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2008年第4期453-455,共3页 Journal of Optoelectronics·Laser
基金 山东省攻关资助项目(2005GG1107001)
关键词 白光LED 光衰 YAG:Ce^3+荧光粉 荧光强度 色坐标 white-LED light output degradation YAG: Ce^3+ phosphor fluorescence intensity chromaticity coordinate/CIE x,y values
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  • 1李忠辉,丁晓民,杨志坚,于彤军,张国义.高亮度InGaN基白光LED特性研究[J].红外与毫米波学报,2002,21(5):390-392. 被引量:10
  • 2鲁鹏程,李建军,郭伟玲,沈光地,刘莹,崔碧峰,邹德恕.隧道带间级联双波长半导体激光器热特性模拟[J].光电子.激光,2004,15(6):649-653. 被引量:9
  • 3苗洪利,王进,王晶,陈静波,孟继武.LED白光照明光源的研制[J].光电子.激光,2004,15(6):657-659. 被引量:14
  • 4吴慧颖,钱可元,胡飞,罗毅.倒装大功率白光LED热场分析与测试[J].光电子.激光,2005,16(5):511-514. 被引量:49
  • 5Su Y K. Opto properties in InGaN/GaN multiple quantum wells and blue LEDs[J]. Optical Materials, 2000, 14(3) :205-209.
  • 6Regina M M,Gerd O M, Michael R K, et al High-power phosphor converted light-emitting diodes based on Ⅲ-nitrides[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2002,8(2) : 339-345.
  • 7Mehmet Arik, James Petriski, Stanton Weaver. Thermal challenges in the future generation solid state lighting application: Light emitting diodes[A]. IEEE 8^th Intersociety Conference Thermal and Thermo Mechanical Phenomenain Electronics Systems[C] . 2002,113-120.
  • 8Barton D L. Osinski M, Perlin P, et al. Life test and filure mechanisms of GaN/AlGaN/InGaN lighting Emitting Diodes[A]. SPIE[C]. 1998,3279:17-27.
  • 9WEN Si-mon, LU Guo-quan. Finite-element modeling of thermal and thermo mechanical behavior for three-dimensional packaging of power electrnics modules[A]. IEEE 7^th Intersociety Conference on Thermal and Thermo Mechenical Phenomena in Electronic System [C]. 2000,303-309.
  • 10Rosner S J. Correlation of cathodo-luminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-Vapor deposition [J].Appl Phys Lett , 1997,70(4):420-422.

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