摘要
对不同场板尺寸的AlGaN/GaN场板结构高电子迁移率晶体管进行了研究,建立简化模型分析场板长度对沟道电场分布的影响.结果表明,调整钝化层厚度和场板长度都可以调制沟道电场的分布形状,当场板长度较小时,随着长度的增大器件击穿电压随之增加,而当长度增大到一定程度后器件击穿电压不再增加.通过优化场板长度,器件击穿电压提高了64%,且实验结果与模拟结果相符.
Results of investigation on AlGaN/GaN field-plate high electron mobility transistor with different field-plate （FP） geometry are presented. The effect of the field-plate length Lfp on the electric field distribution in the channel is thoroughly analyzed by establishing a simplified model. The simulation gives the following estimates： Both the FP length LFP and the thickness t of the insulator under the FP, can reshape the electric field distribution in the channel. If LFP is short, the breakdown voltage Vbr increases with LFP. When LFp increases to a certain extent, Vbr keeps invariable. After optimizing LFP in this paper, Vbr has been increased by 64% . Good agreement between experimental and simulation data is achieved.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第4期2456-2461,共6页
Acta Physica Sinica
基金
国家重点基础研究发展规划(批准号:2002CB311904)
国家自然科学基金(批准号:60676048,F040402)资助的课题~~
