摘要
使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜成功合成了大规模的GaN纳米棒。采用扫描电子显微镜,X射线衍射,透射电子显微镜,高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态,结构和成分。研究结果表明,合成的样品为六方纤锌矿结构的单晶GaN纳米棒。最后讨论了GaN纳米棒的生长机理。
A novel rare earth seed was used as a catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga203/Tb films sputtered on Si（111） substrates. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the morphology, structure and composition of the samples. The results demonstrate that the nanorods are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第4期557-558,562,共3页
Journal of Functional Materials
基金
国家自然科学重大基金资助项目(90201025
90301002)
关键词
纳米棒
GAN
溅射
单晶
nanorods
GaN
sputtering
single-crystal
