摘要
利用射频磁控溅射法在Si（111）衬底上先溅射Mo中间层，再溅射Ga2O3薄膜，然后在氨气中退火合成了大量的一维棒状β—Ga2O3。X射线衍射、选区电子衍射和能量弥散谱的分析结果表明，制备的样品为B—Ga2O3。利用扫描电子显微镜和高分辨透射电子显微镜观察发现，合成的棒具有直而光滑的表面，其直径在70～200nm左右。室温光致发光谱显示出两个较强的蓝光发射。另外，简单讨论棒状β—Ga2O3的生长机制。
β-Ga2O3 nanorods were successfully prepared on Si（111） substrate through annealing Ga2O3/Mo films deposited by radio frequency magnetron sputtering system under flowing ammonia. The synthesized nanorods were confirmed as Ga2O3 with monoclinic structure by X-ray diffraction, selected-area electron diffraction and energy dispersive spectroscopy. Scanning electron microscopy and transmission electron microscopy revealed that the grown β-Ga2O3 nanorods have a straight and smooth surface with diameters ranging from 70-200nm and lengths typically up to several micrometers. The representative photoluminescence spectrum at room tempera- ture exhibited two strong blue-light peaks. Furthermore, the growth mechaninism is discussed briefly.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第4期681-683,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(90301002)
国家自然科学基金重大研究计划资助项目(90201025)
