摘要
通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和镧、钕掺杂ZnO薄膜。XRD分析表明,ZnO薄膜具有c轴择优生长,镧、钕掺杂ZnO薄膜为自由生长的纳米多晶薄膜。用AFM观测薄膜的表面形貌,镧、钕掺杂ZnO薄膜表面形貌粗糙。
The ZnO thin film and rare earth （RE=La,Nd） doped ZnO thin films were deposited on Si（111） substrate by RF magnetron sputtering and annealed at 400℃ under air. As analyzed by XRD, ZnO thin films with high c-axis orientation growth was realized, RE-doped ZnO thin films were nano-multi-crystal thin films with free growth. The rough surface morphology of RE-doped ZnO thin films were observed by AFM.
出处
《理化检验（物理分册）》
CAS
2008年第4期172-174,179,共4页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
