摘要
采用磁控溅射工艺,以纯钨和纯镍为靶材在ITO玻璃上制备Ni掺杂WOx电致变色薄膜,研究了Ni掺杂对WOx薄膜电致变色性能和微观结构的影响机理。实验结果表明:均匀掺杂少量的Ni可改变WOx薄膜内部的缺陷分布及结构,提高薄膜的电致变色性能。XRD分析表明,掺杂后的WOx:Ni薄膜为非晶态;XPS分析表明:WOx:Ni薄膜中的Ni为Ni2+。
Using pure tungsten and nickel as targets, Ni-doped WOx films were deposited on the ITO glass by Reactive Magnetron Sputtering . The electrochromic performances and structure of the films were analyzed. The influence mechanism of Ni doping on the electrochromic performances and structure of WOx films were studied, As demonstrated in the experlment, the distribution of vacancies and the structure were changed by Ni doping , which also results in the improvement of electrochromic performance. The XRD analysis show that the mixed film is in the amorphous state, Ni^2＋ is detected in WOx ; Ni film by XPS.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2008年第2期177-180,共4页
Journal of Materials Science and Engineering
基金
重庆市科委攻关基金资助项目(2000-6114)
