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一种高精度的CMOS电流基准

A High Precise CMOS Current Reference
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摘要 设计了一种高精度的电流基准电路.电路采用正温度系数和负温度系数的电流并联相加,并考虑了电阻的温度系数,得到与温度无关的基准电流源.说明了核电流基准的工作原理,并给出设计公式和误差分析.电路采用0.6μm CMOS 工艺实现,仿真结果表明,在3V 的电压下,电路的耗电电流为 105μA,在温度-40～120℃范围内,输出电流为5μA,温度漂移为72 ppm/℃. A novel high precise current reference structure is desgned in this paper. It is realized by adding a positive temperature coefficient current and a negative temperature coefficient current to cancel the first order temperature effect. The effect of resistor temperature coefficient is also included. Analyzable formula is derived, and error sources are analyzed. The circuit is fabricated with 0. 6μm CMOS technology. SPICE simulation results show that it has 105μA current consumption and provids 5 μA reference current with 72 ppm℃ temperature drift under 3. 3 V voltage supply from -40 ℃to 120 ℃.
作者 高静 姚素英 许长喜
机构地区 天津大学电子信息工程学院 南开大学微电子科学系
出处 《南开大学学报（自然科学版）》 CAS CSCD 北大核心 2008年第2期56-60,共5页 Acta Scientiarum Naturalium Universitatis Nankaiensis
基金 国家自然科学基金(60576025) 天津市科技攻关计划(033183911)
关键词 CMOS 电流基准 低温度漂移 电源抑制比 CMOS current reference low temperature drift PSRR
分类号 TN402 [电子电信—微电子学与固体电子学]
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参考文献5

  • 1陈碧,罗岚,张萌.基于电阻补偿技术的低温漂电流源的设计[J].电子工程师,2004,30(3):10-12. 被引量：6
  • 2Hironori B,Hitoshi S,Akira U,et al.A CMOS bandgap reference circuit with sub-l-V operation[J].IEEE Journal of Solid-state Circuits,1999,34(5):670-674.
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  • 5许长喜.低压低功耗CMOS带隙电压基准及启动电路设计[J].Journal of Semiconductors,2005,26(10):2022-2027. 被引量：5

二级参考文献12

  • 1[1]Razavi B. Design of Analog CMOS Integrated Circuits. Boston(MA): McGraw-Hill, 2001
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共引文献9

南开大学学报（自然科学版）
2008年 第2期

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