摘要
ｎ＝１重空穴激子和施主－受主（Ｄ－Ａ）对的光致发光在常压ＭＯＣＶＤ生长的Ｚｎ０．８５Ｃｄ０．１５Ｓｅ－ＺｎＳｅ应变超晶格中被观测到了．激子和施主－受主对发光峰值位置随着增加正向偏置电压都相继产生蓝移和红移．这是由量子限制斯塔克效应引起的，究竟是蓝移还是红移则取决于由肖特基势垒引起的内部自建电场与外加正向电压引起的外电场之间的竞争．
he n=1 heavy hole exciton and donoracceptor (DA) pair photoluminescences are observed in Zn0.85Cd0.15SeZnSe strained layer superlattice (SLS) grown by atmospheric pressure metal organic chemical vapor deposition (APMOCVD). The peak positions of exciton and DA pair luminescences all successively produce a blue and red shifts with increasing forward bias voltage. It is caused by the Quantum Confined Stark Effect (QCSE) owing to the competition between the builtin field originated from the Schottky barrier and the external field achieved by applied a forward bias voltage.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1997年第4期354-356,共3页
Chinese Journal of Luminescence
基金
国家自然科学基金
关键词
应变超晶格
电场
光致发光
锌镉硒
硒化锌
Zn0.85Cd0.15SeZnSe strained layer superlattice, electric field, photoluminescence
