摘要
采用传统的射频等离子体增强化学气相沉积技术，在较高的工作气压（133～266Pa）下，以0．4nm／s速率制备出优质的氢化纳米晶硅薄膜。薄膜的晶化率约60％，平均晶粒尺寸约6．0nm，暗电导率为10^-3～10^-4／Ω·cm。红外吸收谱显示，薄膜中没有Si-O、Si-C、Si-N等杂质键，随晶化率的提高，Si-H键也逐渐消失。
Hydrogenated nano-crystalline silicon thin films（nc-Si ： H） with deposition rate of 0.4nm/s were prepared by conventional plasma enhanced chemical vapor deposition（PECVD） technique under the high deposition pressure（133-266Pa）, which were characterized and analyzed by Raman spectra and IR spectra. The results showed the average grain size is about 6nm,dark-conductivity value is about 10^-4-10^-3/Ω·cm;the FTIR spectra showed that the bonds of Si-C,Si-O,or Si-N have not been found, the Si-H bond disappeares gradually with the crystallinity increasing.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2008年第5期848-850,共3页
Journal of Functional Materials
基金
韩山师范学院青年科研基金资助项目(0503)
