摘要
在室温下,采用直流反应磁控溅射法,在聚酯薄膜(PET)衬底上镀制了高性能的ITO薄膜。为了提高薄膜与基底的结合力,溅射前采用多弧离子源对PET表面进行了等离子体清洗。研究了溅射工艺参数对ITO薄膜的光电性能和红外发射率的影响规律,探讨了ITO膜的透光和导电机理,并分析了方块电阻与红外发射率的相互关系。实验结果表明,通过等离子体清洗,ITO薄膜的结合力和光电性能都得到了改善。ITO薄膜的红外发射率和方块电阻受制备条件的影响规律具有相似之处,红外发射率随薄膜方块电阻的增大而呈增加的趋势。
Indium tin oxide（liD） films were grown by reactive magnetron sputtering on flexible polyethylene terephthalate（PET） substrates at room temperature. The conventionally cleaned PET substrates were further modified by plasma cleaning. The influence of the ITO film growth conditions on the surface and interface properties was studied. The results show that plasma cleaning of the PET substrates considerably improves the optical transmittance and interfacial adhesion. Moreover, film growth conditions, including pressure, oxygen concentration, bias voltage, sputtering power and film thickness, lead to variations in its sheet resistance. Interesting finding is that. variations in the infrared emissivity resemble to those of the sheet resistance.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2008年第3期256-260,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(No.50471004)资助
关键词
ITO膜
直流磁控溅射
光电性能
红外发射率
Indium tin oxide （ITO） thin films, DC magnetron sputtering, Photoelectricity properties,Infrared emissivity
