摘要
研究了SiO2厚度对光电二极管的电子辐射效应的影响。制备了3种光电二极管,分别采用不同厚度热氧化SiO2作为光敏面钝化膜。以能量为0.8MeV的电子束为辐射源,对3种光电二极管进行4个剂量的辐射。实验发现,辐照后光电二极管的光电流衰减强烈依赖波长,在短波和长波阶段衰减明显,而在中波阶段基本不衰减;暗电流变化率随着辐照剂量迅速增加。另外,薄钝化的二极管光电流衰减最小,同时暗电流增加最显著。
Research about the influence of electronic radiation effect of photodiode by thickness of SiO2 had been done. Three photodiode samples with different thickness of SiO2 as passivation film had been manufactured. Then they were radiated by 0.8 MeV electron under 4 radiation dosages respectively. It was found that the photocurrent of photodiodes decreased at short wavelength and long wavelength, but degradation never happened at middle wavelength. And, the durkcurrent increased with radiation dosage. In addition, the p.hotodiodes passivated with thin SiO2 decreased slightly in photocurrent, however increased remarkably in darkcurrent.
出处
《科学技术与工程》
2008年第10期2562-2564,2569,共4页
Science Technology and Engineering
