摘要
采用ITO靶和Zr靶共溅射在玻璃衬底上沉积了ITO∶Zr薄膜,研究了衬底温度、氧流量对ITO∶Zr薄膜性能的影响。表征和对比了ITO∶Zr薄膜晶体结构和表面粗糙度的变化。ITO∶Zr薄膜在低温生长时就可以得到良好的光电性能,衬底温度的提高显著改善了薄膜的光电性能;一定范围的氧流量也可以改善薄膜的性能,但过量的氧却使得ITO∶Zr薄膜的光电性能变差。透射谱表明各参数的变化引起了明显的"Burstin-Moss"效应。当优化溅射条件为工作气压0.5Pa、氧流量0.3sccm、直流溅射功率45W(ITO靶)和射频功率10W(Zr靶)、沉积速率8nm/min和一定的衬底温度时,可以获得方阻10～20Ω/sq和可见光透过率85%(含基底)以上的ITO:Zr薄膜。
ITO： Zr thin films are deposited on glass substrate by co-sputtering with ITO and Zr targets. The influences of parameters such as substrate temperature and oxygen flow rate on the properties of ITO ： Zr thin films are studied. The crystalline structure and surface roughness of ITO ; Zr thin films some measures. The better optieal-electronics characteristics of the thin films can be achieved at low substrate temperature and the increase of substrate temperature remarkably improves the optical-electronic characteristics of the thin films. The certain oxygen flow rates can change the properties of ITO ; Zr thin films,but excessive oxygen can worsen the optical-electronic characteristics. Obvious ＂Burstin-Moss＂ effect can be revealed by transmittance spectra with different parameters. The optimum parameters are as follows： sputtering pressure of 0. 5 Pa,oxygen flow rate of 0.3 sccm,sputtering DC power of 45 W （ITO taget） and RF power of 10 W （Zr taget） ,deposition rate of 8 nm/min and the certain substrate temperature. ITO ; Zr thin films with sheet resistance of 10-20 Ω/sq and optical transmittance of beyound 85% （including glass substrate） can be obtained.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2008年第6期776-780,共5页
Journal of Optoelectronics·Laser
基金
上海应用材料基金资助项目(0525)
关键词
ITO薄膜
磁控溅射
衬底温度
氧流量
ITO films
magnetron sputtering
substrate temperature
oxygen flow rat
