摘要
选取典型的星用功率MOSFET器件JANTXV 2N6798和JANTXV 2N7261为研究对象,就剂量率对MOSFET器件总剂量效应的影响进行试验研究。在试验中,选取钴-60γ射线,以不同剂量率进行辐照试验。通过试验研究,获得了被试器件阈值电压、漏电流和击穿电压随总剂量率的变化特性。结果表明,低剂量率更易引起器件损伤。
Two typical military power MOSFETs, JANTXV 2N6798 and JANTXV 2N7261, were irradiated by ^60Co γ-ray at various dose rates. The threshold voltage, breakdown voltage and leakage current characteristic curve vs. irradiation dose were obtained. Test result shows that low dose rate induces device malfunction more easily.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2008年第5期470-474,共5页
Atomic Energy Science and Technology
