摘要
使用星形六苯芴类新材料1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene(HKEthFLYPh)分别制备了三种不同结构的有机电致发光器件.在结构为indium-tin oxide(ITO)/NPB(40nm)/HKEthFLYPh(10nm)/Alq3(50nm)/Mg:Ag(200nm)的器件中,获得了两个电致发光谱峰分别位于435和530nm处的明亮白光.HKEth-FLYPh是能量传输层;N,N′-bis-(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine(NPB)是空穴传输层和蓝色发光层;tris(8-hydroxyquinoline)aluminum(Alq3)是电子传输层和绿色发光层.结果表明,当驱动电压为15V时,器件的最大亮度达到8523cd·m-2;在5.5V时,器件达到最大流明效率为1.0lm·W-1.在电压为9V时,CIE色坐标为(0.29,0.34).此外,通过改变HKEthFLYPh层的厚度,发现蓝色发射的相对强度随着HKEthFLYPh层厚度的增加而增强.
Double-layer and triple-layer organic light-emitting diodes (OLEDs) were fabricated using a novel starshaped hexafluorenylbenzene organic material, 1,2,3,4,5,6-hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene (HKEthFLYPh) as an energy transfer layer, N,N'-bis-(1-naphthyl)-N,N'-diphenyl-(1,1 '-biphenyl)-4,4'-diamine (NPB) as a hole-transport layer (HTL) and blue emissive layer (EML), and tris (8-hydroxyquinoline)aluminum (Alq3) as an electron-transport layer (ETL) and green light-emitting layer. Bright white light was obtained with a triple-layer device structure of indiumtin-oxide (ITO)/NPB (40 nm)/HKEthFLYPh (10 nm)/Alq3 (50 nm)/Mg:Ag (200 nm). A maximum luminance of 8523 cd-m-2 at 15 V and a power efficiency of 1.0 lm·W^-1 at 5.5 V were achieved. The Commissions Internationale de L' Eclairage (CIE) coordinates of the device were (0.29, 0.34) at 9 V, which located in white light region. With increasing film thickness of HKEthFLYPh, light emission intensity from NPB increased compared to that of Alq3.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2008年第6期977-980,共4页
Acta Physico-Chimica Sinica
基金
国家自然科学基金(20674049)
国家杰出青年基金(60425101)
教育部新世纪优秀人才计划(NCET-06-0812)
电子科技大学中青年学术带头人计划(060206)资助