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基于负反馈箝位技术的高性能CMOS带隙基准源 被引量:6

High Performance CMOS Bandgap Reference Source Based on Negative Feedback Clamp Technique
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摘要 该文提出了一种结构简单的高性能带隙电压基准源。电路设计中采用负反馈箝位技术实现电压箝位,消除了运放自身失调效应的影响,简化了电路设计;输出部分采用调节型共源共栅结构,保证了高的电源抑制比(PSRR)。整个电路采用SMIC0.18μm标准CMOS工艺实现,并用HSPICE进行仿真,结果表明所设计的电路在-15~70℃范围内的温度系数为10.8ppm/℃,直流PSRR为74.7dB,在10Hz^1MHz频带内的总的输出噪声电压为148.7μV/sqrt(Hz)。 A novel CMOS bandgap reference is presented. A negative feedback clamp technique is used which eliminates the offset of Op-Amps and simplifies the design. A regulated cascode configuration is used to improve Power Supply Rejection Ratio (PSRR). It is implemented in SMIC standard 0.18μm CMOS process, the results from HSPICE simulation show that the temperature coefficient between -15-70℃ is 10.8ppm/℃, and the PSRR at 10Hz is 74.7dB, the output noise voltage is 148.7μV/sqrt(Hz).
出处 《电子与信息学报》 EI CSCD 北大核心 2008年第6期1517-1520,共4页 Journal of Electronics & Information Technology
基金 国家自然科学基金(60476046,60676009)资助课题
关键词 带隙电压基准源 负反馈箝位 温度稳定性 Bandgap voltage reference source Negative feedback clamp Temperature stability
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参考文献7

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二级参考文献17

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