摘要
采用常压烧结法制备碳化硅陶瓷,对其显微结构和导电性能进行了分析。研究发现,常压法可获得致密的碳化硅烧结体,具有较低的电阻率,在300～600℃温度范围内表现出明显的负电阻率温度系数。
SiC ceramics were prepared by pressureless sintering. The microstructure and conductivity of the sintered samples were studied. It can be concluded that the samples prepared by pressureless sintering was very densification, had lower conductivity, and exhibited negative TCR behavior in the range from 300℃ to 600℃.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2008年第7期52-53,共2页
China Ceramics
关键词
常压烧结
碳化硅陶瓷
导电性
Pressureless sintering, SiC ceramics, Conductivity
