摘要
通过在1050°C时氨化Ga2O3/Mg薄膜制备出簇状GaN纳米线。用X射线衍射(XRD),傅里叶红外吸收光谱(FTIR)扫描电子显微镜(SEM)和高分辨电子显微镜(HRTEM)对样品进行测试分析。结果表明,GaN纳米线为六万纤锌矿结构单晶相并且成族生长,直径在200～500nm米左右,其长度可达5～10μm。几乎所有纳米线的直径均有逐渐缩小的趋势。对Mg膜的作用进行了初步的分析。
GaN nanowires in cluster were fabraicated by ammoniating Ga2O3/Mg film at 1 050℃. The GaN nanowires were characterized by X-ray diffraction（XRD）, Fourier transform infrared reflection （FTIR） spectroscopy, scanning electron microscope （SEM） and highresolution transmission electron microscopy （HRTEM）. The results indicated that these nanowires were hexagonal GaN single crystals with average diameters about 200- 500 nm and length of 5-10 μm. The diameter of nanowires had a tendency to thin. The effect of Mg layer was discussed briefly.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第2期190-192,共3页
Research & Progress of SSE
基金
国家重大自然科学基金资助项目(批准号:90201025和批准号:90301002)
关键词
氮化镓
磁控溅射
纳米线
GaN
magnetron sputtering
nanowire
