摘要
通过对溶液法金属诱导晶化多晶硅薄膜制备工艺的优化,制备出性能良好的P型掺杂多晶硅薄膜。厚度为50nm的MICP+-Poly-Si薄膜的方块电阻可降低至400Ω左右,其光学特性表现为在红光区域具有比较高的反射率和很小的吸收率,因此用它替代ITO用作红光OLED的阳极材料。由于此薄膜对可见光比较高的反射率和阴极铝对可见光的高反射性,使之形成了一定Q值的微腔效应。结果显示该器件的最大流明效率为5.88cd/A,比用ITO作阳极制备的OLED提高了57%。进一步优化器件结构,调整发光层在腔中的最佳位置,可以大大增强发光强度,从而可以实现发光强度高、单色性好的红色微腔有机电致发光显示器件。
The high performance of Boron-doped solution-based metal induced crystallized poly-Si thin film has been obtained by optimizing its preparation process flow. The sheet resistance of the MIC P^＋-Poly-Si thin film with the thickness of 50 nm has been reduced to about 400 Ω; meanwhile, it has the relatively high reflectivity and very low absorptivity in red light region. Accordingly, it was used as the electrode of OLED to substitute ITO. The P^＋-Poly-Si anode with relatively high reflectivity and the Al cathode with very high reflectivity could form a micro-cavity structure. This micro-cavity structure has a certain Q value so that it could improve the efficiency of the OLED fabricated on it. The maximum luminance efficiency of the device with the poly-Si anode is 5.88 cd/A, higher than that of the OLED with the ITO anode by 57%. By further optimizing the device structure and the best location of the emitting layer, the EL intensity could largely increase and the FWHM （Full Width Half Maximum） of the emitting spectrum could decrease. Consequently, the Red Microcavity Organic Light Emitting Device with high performance could be achieved.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第2期241-244,275,共5页
Research & Progress of SSE
基金
国家高技术研究发展计划“863”平板显示专项(批准号:2004AA303570)
国家自然科学基金重点基金(批准号:60437030)支持
关键词
金属诱导多晶硅
有机电致发光器件
微腔
metal induced crystallized poly-crystalline Si film
organic light emitting display
microcavity
