摘要
多晶硅锭中经常出现硬质夹杂颗粒,严重影响线切割硅片的表面质量,严重时造成硅片切割生产中断线。我们采用光学显微镜、扫描电镜-特征X射线能谱仪、X射线衍射仪等手段对定向凝固多晶硅锭中的夹杂进行了分析。采用溶解硅基体后沉淀萃取的方法取得硅锭不同部位的夹杂。分析结果表明,硅锭中夹杂的物相主要有两种:β-SiC和β-Si3N4,SiC的数量较多;二者形貌有显著区别:前者呈不规则块状,而后者则呈平直杆状。硅锭的顶表面附近夹杂高度富集,但内部仍偶有大于100微米的较大的碳化硅夹杂颗粒出现。
Inclusion particles severely affect surface quality of multi-crystalline silicon wafers, and threaten the wire cutting process of the wafer production from multi-crystalline silicon ingot. Because they may cause wire broken in the cutting processes. Scanning electron microscope associated with energy spectrometer for characteristic X-ray, 3D digital microscope and X-ray diffraction have been used to analyze the inclusions in a directionally solidified multi-crystalline silicon ingot. The inclusions were collected by dissolving silicon samples from different positions of the silicon ingot, and extracting the undissolved precipitations. The results show that, there are two types of inclusions： β-SiC and β-Si3N4, with the amount of the former relatively larger. Their morphologies are remarkably different, the SiC inclusions appear as irregularly shaped polyhedron particles, while the Si3N4 inclusions appear as straight rods. The inclusions are highly concentrated in the top layers of the ingot, rarely seen in 10 mm below surface. However, occasional appearance of SiC particles of larger than 100 μm in the internal part of the ingot is still found.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2008年第3期449-452,共4页
Journal of Materials Science and Engineering
关键词
太阳能
多晶硅
夹杂
solar energy
multi-crystalline silicon
inclusion
