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Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions
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摘要 Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to N~0. A possible mechanism accounting for this phenomenon is discussed. Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+6 film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: Prom the junction annealed-in-air to the junction annealedin-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to N~0. A possible mechanism accounting for this phenomenon is discussed.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第6期2272-2276,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant Nos 10474133 and 10674169) the National Fundamental Research of China (Grant No 2007CB925002)
关键词 MANGANITE MAGNETORESISTANCE manganite junction ANNEALING manganite, magnetoresistance, manganite junction, annealing
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