摘要
用高分辨X射线光电子能谱仪(XPS)和傅里叶变换红外(FTIR)光谱仪研究了SiC外延层表面的组分结构.XPS宽扫描谱,红外掠反射吸收谱及红外镜面反射谱的解析结果说明SiC外延层表面是由Si—O—Si和Si—CH2—Si聚合体构成的非晶SiCxOy:H.SiC外延层表面的化学态结构为Si(CH2)4,SiO(CH2)3,SiO2(CH3)2,SiO3(CH3),Si—Si,游离H2O,缔合OH,Si—OH,O和O2.根据化学态结构和元素电负性确定了化学态的各原子芯电子束缚能顺序,并与XPS窄扫描谱拟合结果相对比,建立了化学态与其束缚能的对应关系,进而用Si(CH2)4的实际C1s束缚能值进行校正,确定了各化学态的束缚能.结果发现,除了SiCxOy(x=1,2,3,4,x+y=4)的Si2p束缚能彼此不同外,其C1s和O1s彼此也不相同,其中SiO2(CH3)2和SiO3(CH3)的C1s束缚能与CHm和C—O中C1s的相近,对此从化学态结构,元素电负性和邻位效应进行了解释.
In this paper, the composition structures of SiC epilayer surface are characterized by high resolution X-ray photoelectron spectroscopy （XPS） and Fourier transform infrared （FYIR） spectrum. The results of XPS wide scan spectroscopy, infrared glancing reflection absorption spectrum and infrared specular reflection spectroscopy show that the amorphous phase SiCx Or ： H is made up of Si-O-Si and Si-CH2-Si polymers. The chemical state structures are composed of Si （ CH2 ）4 , SiO （ CH2 ）3 , SiO2 （CH3）2, SiO3 （CH3）, Si-Si, dissociative H2 O, combined OH, Si-OH, O and 02 . The order of the atom core electron binding energy values is determined by chemical state structures and element electronegativity. Compared with the XPS narrow scan spectrum fitting results, the corresponding relation between chemical states and its binding energies is established, and all chemical state binding energies are obtained using the calibration of C ls binding energy of Si（CH2）4 - The result shows that the C ls and O ls binding energy values of SiCxO4-x （x = 1,2,3） are different from each other, similar as their Si 2p binding energies, of which the C ls of SiO2（CH3）2 and SiO3（CH3） are respectively close to those of CHm and C--O. The reasonable explanation is presented in terms of chemical state structures, electronegativity and neighbouring site effects.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2008年第7期4119-4124,共6页
Acta Physica Sinica
基金
国家重点基础研究发展计划(973)项目(批准号:51327020201,51327020202)
国家自然科学基金(批准号:60376001)
教育部重点项目(批准号:106150)资助的课题~~
