摘要
从MLCC内部结构入手,分析了造成其电场畸变和电流分布不均匀的原因。运用有介质时的高斯定理,论证了在某些位置上非均匀电场强度要大于均匀电场强度。在MLCC内电极当中,处于最外边的上、下两个电极层所承受的电流相对较小,越靠近外电极,内电极层流过的电流越大。在此基础上,提出了在MLCC内部容易出现电压击穿和电流击穿的部位。
Based on the MLCC internal structure, the structure of the reasons caused MLCC inside electric field distortion and the uneven distribution of current were analyszed. A medium Gauss theorem was used to prove that on some point non-uniform electric field intensity which was greater than uniform electric field intensity. In the inner electrode of MLCC, the borne current of the outside up and down two electrode layers was relatively small. The nearer to the outside electrode it is, the greatlier electrodes current inner electrodes later flows. The ease voltage breakdown and current breakdown positions were proposed.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第7期65-67,共3页
Electronic Components And Materials
关键词
电子技术
电压击穿
电流击穿
电场畸变
片式多层陶瓷电容器
electron technology
voltage breakdown
current breakdown
electric field distortion
chip MLCC
