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超结理论的产生与发展及其对高压MOSFET器件设计的影响 被引量:2

The Development and Application of Superjunction Theory
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摘要 对超结理论的产生背景及其发展过程进行了介绍。以应用超结理论的COOLMOSTM器件为例,介绍了超结器件的工作原理、存在的缺点以及提出的改进方法;并对其他基于超结理论的器件进行了简单介绍。 The generation of superjunction theory and its development are introduced. With COOLMOS^TM device as an example, the operational principle of superjunction devices based on superjunction theory is discussed, along with its shortcomings and techniques for improvement. Finally, other applications of the superjunction theory are described in brief.
出处 《中国集成电路》 2008年第8期15-21,共7页 China lntegrated Circuit
关键词 超结器件 功率半导体器件 COOLMOSTM 导通电阻 击穿电压 Superjunction device Power semiconductor device COOLMOSTM On-resistance Breakdown voltageEEACC:2560P
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