摘要
通过金银合金助催的碳热蒸发方式,在单晶Si衬底上生长了几种不同形貌的SnO2纳米结构。用SEM、XRD、Raman和PL等测试技术对其形貌、结构进行了表征。结果表明:PL光谱中观察到的359和450nm两个新峰是由存在于SnO2纳米结构中的发光中心如纳米晶体或氧空位等造成的。SnO2纳米结构的生长遵从VLS机制,与反应源的不同距离所产生的温度差是造成这些纳米结构具有不同形貌的主要原因。
Several different morphologies of SnO2 nanostructures were prepared on single crystal silicon substrate by Au-Ag alloying catalyst assisted carbothermal evaporation. And its morphology and structure were characterrized by SEM, XRD, Raman and photoluminescence spectra （PL）. The results show that two new peaks at 359 and 450 nm in the measured photoluminescence spectrum are observed, implying that more luminescence centers such as nanocrystals and oxygen vacancies exist in SnO2 nanostructures. The growth of SnO2 nanostructures is discussed on the basis of the vapor-liquid-solid （VLS） mechanism. Nanostructures with different morphology are determined by the different growth temperature result from the different distance away from the reaction source.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2008年第8期52-54,64,共4页
Electronic Components And Materials
基金
深圳市微纳光子信息技术重点实验室开放基金资助项目(No.2000811)
关键词
电子技术
SnO2纳米结构
碳热蒸发
晶体生长
晶体形貌
electron technology
SnO2 nanostructures
carbothermal evaporation
crystal growth
crystal morphology
