摘要
分析了国产VDMOS(Vertical Double-diffusion MOSFET)总剂量试验数据,并比较了辐照环境中不同偏置下电学参数的变化差异,发现新工艺研制的VDMOS器件辐照敏感参数为击穿电压和阈值电压。根据试验结果得到考核VDMOS辐照可靠性的有效试验方法:击穿电压抗辐照考核时应采用漏偏置,阈值电压抗辐照考核时应采用栅偏置。
Total dose irradiation effects on a VDMOS developed at Institute of Microelectronics, CAS were investigated, particularly the electric parameter changes under different bias conditions. It was found that the breakdown voltage degradation by the irradiation depended mainly on the drain bias, whereas the threshold voltage degradation depended mainly on the gate bias. Thus, an innovative and effective method to domestic VDMOS total dose ionization characterization is that threshold voltage radiation hardening characterization should be tested on gate bias condition, and the breakdown voltage radiation hardening characterization, be tested on the drain bias.
出处
《核技术》
EI
CAS
CSCD
北大核心
2008年第8期613-615,共3页
Nuclear Techniques
