摘要
采用射频磁控溅射方法制备了LiNbO3/SiO2/Si薄膜。通过X射线衍射(XRD)、电感耦合等离子体质谱(ICP-MS)和傅立叶变换红外吸收光谱(FT-IR)对薄膜的物相、晶体取向和成分进行了表征。采用荧光分光光度计研究了LiNbO3/SiO2/Si薄膜的光致发光。研究结果表明:在280 nm激发光的激发下,LiNbO3/SiO2/Si薄膜在室温下发射470 nm的蓝光,来源于LiNbO3薄膜与SiO2层界面处自捕获激子的辐射复合,发现在SiO2/Si薄膜上生长LiNbO3薄膜调制SiO2/Si薄膜的发光机制。
LiNbO3/SiO2/Si films were prepared by radio-frequency(RF) magnetron sputtering technique. The phrase, crystal orientation and composition of the films were characterized by X-ray diffraction(XRD), Inductively coupled plasma mass spectrum ( ICP - MS ) and Fourier transform infrared absorption spectrum ( FT- IR ). The photoluminescence ( PL ) of the LiNbO3/SiO2/Si films was measured by Fluorescence spectrophotometer, The results show that LiNbO3/SiO2/Si films emitted blue light with 470 nm wavelength at room temperature by a light excitation of 280 nm wavelength and PL came from the recombination of self-trapped exdton,and PL mechanism of SiO2/Si film changed after LiNbO3 film was grown on the SiO2/Si film
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2008年第8期1063-1066,共4页
Journal of Optoelectronics·Laser
基金
天津市应用基础研究计划资助项目(06TXTJJC14600)
天津市高等学校科技发展基金资助项目(2004ZD02)