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六方YMnO_3多铁性薄膜的制备与性质研究进展 被引量:9

Research Progress in Preparation and Properties of Hexagonal YMnO_3 Multiferroic Films
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摘要 六方YMnO3是一种集铁电性与反铁磁性于一体的新材料,具有丰富的物理内容和优良的应用前景。本文综述了近年来六方YMnO3薄膜在制备方法、电学、磁学等物理性质的研究进展。基于其电磁性质,阐述了该薄膜在自旋阀等器件方面的潜在应用。最后指出了六方YMnO3薄膜研究中存在的问题,提出解决的思路。 Hexagonal yttrium manganese oxide (YMnO3 ), which exhibit simultaneously ferroelectric and antiferromagnetic properties, possesses abundant physical content and potential applications. In this paper, the recent progress of hexagonal YMnO3 film was reviewed, which includes preparation technique, electrical and magnetic properties. Based on these physical properties of the film, the potential application in spin valves devices was described. The existing problems in the research of YMnO3 film were evaluated, and some ways were proposed.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2008年第4期955-961,共7页 Journal of Synthetic Crystals
基金 国家自然科学基金(No.60476001) 河南大学科研基金资助(No.06YBZR022 05YBZR018)
关键词 六方YMnO3 薄膜 多铁性 制备方法 应用 hexagonal YMnO3 film muhiferroics preparation method application
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参考文献47

  • 1南策文,刘俊明,等.[EB/OL].http://www.xssc.ac.cn/Web/ListConfs/ConfBrief.asp?rno=979,2007.
  • 2Ramesh R, Spaldin N A. Multiferroics: Progress and Prospects in Thin Films[J]. Nature Materials, 2007, 16: 21.
  • 3Aikawa Katsufuji Y, Arima T, et al. Effect of Mn Trimerization on the Magnetic and Dielectric Properties of Hexagonal YMnO3 [ J]. Phys. Rev. B, 2005, 71: 184418.
  • 4Marti X, Sanchez F, Hrabovsky D,et al. Epitaxial Growth of Biferroic YMnO3 (0001) on Platimum Electrodes [J]. J. Cryst. Growth, 2007, 299 : 288.
  • 5Seongsu L, Misun K, Changhee L, et al. Multiferroic Behavior and Two-Dimensional Magnetism of Hexagonal Manganites [ J ]. Physics Ⅱ, 2006, 385-386 : 405.
  • 6刘保亭,闫小兵,程春生,李锋,马良,赵庆勋,闫正.含NiTi阻挡层的硅基(La_(0.5)Sr_(0.5))CoO_3/Pb(Zr_(0.4)Ti_(0.6))O_3/(La_(0.5)Sr_(0.5))CoO_3铁电电容器异质结[J].人工晶体学报,2007,36(1):157-160. 被引量:1
  • 7Fujiraura N, Azuma S I, Aoki N,et al. Growth Mechanism of YMnO3 Film as a New Candidate for Nonvolatile Memory Devices [J]. J. Appl. Phys. , 1996,80: 7084.
  • 8Laukhin V, Skumryev, Martl X. Electric-field Control of Exchange Bias in Muhiferroic Epitaxial Heterostructures [ J ]. Phys. Rev. Leu. , 2006,97: 227201.
  • 9Joonghoe D, Blamire M G. Competing Functionality in Multiferroic YMnO3 [J]. Appl. Phys. Lett. , 2005,87: 252504.
  • 10Martt X, Sanchez F, Hrabovsky D,et al. Exchange Biasing and Electric Polarization with YMnOa[J].Appl. Phys. Lett. , 2006,89: 032510.

二级参考文献13

  • 1Auciello O,Scott J F,Ramesh R.The Physics of Ferroelectric Memories[J].Physics Today,1998,7:22.
  • 2Chang Chung-Yuan,Juan Trevor Pi-chun,Lee Joseph Ya-min,et al.Fabrication and Characterization of Metal-ferroelectric(PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor Capacitors for Nonvolatile Memory Applications[J].Appl.Phys.Lett.,2006,88:072917.
  • 3Kang Ghi Yuun,Bae Sang-Woo,Park Hyung-Ho,et al.Fabrication and Electromechanical Properties of a Self-actuating Pb(Zr0.52Ti0.48)O3 Microcantilever Using a Direct Patternable Sol-gel Method[J].Appl.Phys.Lett.,2006,88:042904.
  • 4Es-Souni M,Kuhnke M,Iakovlev S,et al.Self-poled Pb(Zr,Ti)O3 Films with Improved Pyroelectric Properties via the Use of (La0.8Sr0.2)MnO3/Metal Substrate Heterostructures[J].Appl.Phys.Lett.,2005,86:022907.
  • 5Liu B T,Cheng C S,Li Feng,et al.Ni-Al Diffusion Barrier Layer for Integrating Ferroelectric Capacitors on Si[J].Appl.Phys.Lett.,2006,88:252903.
  • 6Yang B,Aggarwal S,Dhote A M,et al.La0.5Sr0.5CoO3/Pb(Nb0.04Zr0.28Ti0.68)O3/La0.5Sr0.5CoO3 Thin Film Heterostructures on Si Using TiN/Pt Conducting Barrier[J].Appl.Phys.Lett.1997,71:356.
  • 7Summerfelt S R,Moise T S,Xing G,et al.Demonstration of Scaled(≥0.12μm2) Pb(Zr,Ti)O3 Capacitors on W Plugs With Al Interconnect[J].Appl.Phys.Lett.,2001,(79):4004.
  • 8Liu B T,Maki K,Agganval S,et al.Low-temperature Integration of Lead-based Ferroelectric Capacitors on Si with Diffusion Barrier Layers[J].Appl.Phys.Lett.,2002,80:3599.
  • 9Liu B T,Maki K,So Y,et al.Epitaxial La-doped SrTiO3 on Silicon:A Conductive Template for Epitaxial Ferroelectrics on Silicon[J].Appl.Phys.Lett.,2002,80:4801.
  • 10Wang Y,Ganpule C,Liu B T,et al.Epitaxial Ferroelectric Pb.Zr,Ti.O3 Thin Films on Si Using SrTiO3 Template Layers[J].Appl.Phys.Lett.,2002,80:97.

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