摘要
P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.
P-type ZnO：N films have been grown successfully by chemical vapor deposition （CVD） using Zn4（OH）2（O2CCH3）6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrete temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of ＋5.127×10^17 cm^-3, resistivity of 0.04706 Ω· cm and Hall mobility of 259 cm^2/（V·s）; they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was transformed from p-type to n-type conduction.
基金
Chengdu Science and Technology Project (Grant No. 07GGYB572GX)
Fund of State Key Laboratory (Grant No. L08010301JX0615)
