摘要
采用电阻热蒸镀法,分别以不同的沉积温度在锗基底上制备了PbTe薄膜。用X射线衍射仪(XRD)、原子力显微镜(AFM)和红外光谱测试仪(System2000)表征了不同沉积温度下薄膜的微结构和光学特性.结果表明,沉积温度对PbTe薄膜的结构、择优取向、生长方向、晶粒大小、禁带宽度以及短波吸收限均有明显影响.
The PbTe films are fabricated respectively on the Ge substrates by using a resistance thermal evaporation deposition method at different deposition temperatures. The microstructures and optical properties of the PbTe films deposited at different temperatures are characterized with a X-ray Diffractor （XRD）, an Atom Force Microscope （AFM） and an Infrared （IR） spectrometer （System 2000）. The results show that the deposition temperature has an evident effect on the structure, optimal orientation, growth orientation, grain size, band gap and short-wave absorption edge of a PbTe film.
出处
《红外》
CAS
2008年第8期26-29,48,共5页
Infrared
