摘要
随着大格式InSb FPA器件发展,像元间距越来越小,芯片总面积不断增加,对像元加工精度和均匀性都提出了极高的要求,原有的湿法刻蚀已越来越难于满足工艺要求,主要体现在湿法横向刻蚀导致原本设计很小的像元面积进一步缩小,严重降低InSb FPA的填充因子。通过实验,介绍一种湿法刻蚀工艺,可以较好解决上述问题。
In this paper three different chemical systems have been studied to meet the requirements of continuously scaling down the pixel area for large-format high-density InSb FPAs. The lateral etch ratio, uniform and slope of the undercut sidewall were investigated for different chemical systems and etching conditions. An optimum wet etching process was got for small （2μm） feature patterning in large format FPA devices fabrication.
出处
《激光与红外》
CAS
CSCD
北大核心
2008年第9期899-901,共3页
Laser & Infrared
关键词
红外探测器
焦平面
湿法刻蚀
锑化铟
infrared detector
focal plane array
wet etching
InSb
