摘要
介绍了在ＶＧＥＳＣＡＬＡＢ２１０电子能谱仪上自己研制组装的用于研究单晶金属表面吸附层的原位ＴＰＤ装置。研制的单晶样品台采用钽丝加热，最高加热速率可达３０ｋ／ｓ，线性升温范围－１００～１０００℃，最高可达１０００℃以上。同时介绍了该ＴＰＤ装置成功地应用于Ｐｄ（１１１）面上的Ｃ＊Ｏ／ＣＯ同位素交换吸附实验的应用实例。
The establishment of the in situ Temperature Programmed Desorption (TPD) system for VG ESCALAB 210 spectrometer was described,which can be used for the investigation of the course of adsorption and desorption on the surface of metal crystalline.The crystal samples are linearly heated from -100℃ to 1000℃ by Tantalum wire.The highest heating rate and temperature are 30K/s and up to 1000℃, respectively.The system has been.used for the investigation of the isotope exchange (C *O/CO) on the face of Pd(111).
出处
《分析测试技术与仪器》
CAS
1997年第4期199-203,共5页
Analysis and Testing Technology and Instruments
基金
中国科学院大型仪器功能开发基金
关键词
程序升温脱附
表面吸附
同位素交换吸附
TPD
temperature programmed desorption (TPD) the surface of metal crystalline ultra high vacuum(UHV) isotope exchange
