摘要
设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件。微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1 W/A和38.2 W。测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%。测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计。
The epitaxy material and device for high quantum efficiency and small optical loss 980 nm laser diode （LD） were designed and fabricated. The maximal electro-optical conversion efficiency of the standard lcm laser bar with micro channel cooler is 60.0% under continuous-wave （CW） working condition, the corresponding slope efficiency and output power are 1.1 W/A and 38.2 W, respectively. The measured internal loss coefficiem and internal quantum efficiency are 0.58 cm^-1 and 91.6%, respectively. The result shows that the improvement of electro optical conver,sion efficiency is due to new InGaAs/GaAsP strain-compensated quantum well and the large optical cavity waveguidc structure.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2008年第9期1323-1327,共5页
Chinese Journal of Lasers
基金
国家自然科学基金(9140A02011406ZK03)资助项目
关键词
半导体激光器
电光效率
InGaAs/GaAsP量子阱
大光腔
semiconductor lasers
electro optical conversion efficiency
InGaAs/GaAsP quantum well
large opticalcavity
