摘要
目的研究衬底温度对ZnO薄膜结构和发光性能的影响及薄膜结构与发光性能两者之间的关系。方法在玻璃衬底上采用射频磁控溅射法,固定其他工艺参数、改变衬底温度制备ZnO薄膜。对薄膜进行XRD谱和室温光致发光(PL)谱研究。结果衬底温度在25℃到250℃之间,随着温度的升高,结晶质量变好,且紫外发光相对明显增强。在衬底温度为250℃时,结晶质量和发光性能均达到最优化。继续升高衬底温度,结晶质量和发光性能都下降。结论衬底温度对ZnO薄膜的制备有着重要的影响;薄膜发光性能与结晶质量密切相关,结晶质量越好,紫外发光相对强度越大。
Aim To study the effect of substrate temperature on crystallization condition and PL of ZnO thin films and their relations. Methods Keeping other controls invariable, ZnO thin film was deposited by RF magnetron sputtering on glass substrate. Strong at different substrate temperatures. The crystallization condition and photoluminescence of the samples were analyzed by XRD and PL spectrum. Results From 25 -250℃ ,with the temperature rising, the crystallization condition get better and UV eradiate swell. While, when the temperature exceeded 250℃ they became worse again. It was demonstrated that crystallization condition is best and UV eradiation is most strong when substrate temperature is 250℃. Conclusion The temperature of substrate has an important effect on crystallization condition and PL spectrum of ZnO thin film. PL spectrum is strongly connected with its crystallization condition ,the better of crystallization condition,the stronger of UV eradiation.
出处
《西北大学学报（自然科学版）》
CAS
CSCD
北大核心
2008年第1期31-34,共4页
Journal of Northwest University（Natural Science Edition）
基金
陕西省自然科学基金(2007F16)
关键词
ZNO薄膜
衬底温度
光致发光
激子发射
ZnO th in films
substrate temperature
photoluminescence
exciton eradiate
